Our team has developed integrated circuits in Silicon Germanium, GaAs (pHEMT), and GaN. 

Silicon Germanium (SiGe)

Our customers benefit from our Silicon Germanium (SiGe) since it provides the ability to achieve high levels of integration with microwave and millimeter-wave functionality. For instance, SiGe allows for the integration of amplifiers, mixers, voltage controlled oscillators and other functions, along with mixed signal and digital circuits. This allows functionality to W-band and higher for phased array radar and communication systems.

SiGe offers the ability to create highly integrated circuits even systems-on-a-chip (SoC) with flipchip or conventional interconnect. For instance, transmit/receive full functionality can be realized in one SiGe chip with digital interfaces and temperature control loops.

Below is a partial list of SiGe solutions that our team has developed in SiGe:

Common Leg (CLC)

  • Freq: 7-12GHz
  • Phase Control: 6 Bits
  • Amplitude Control: 5 Bits
  • Gain: 15dB

T/R Module (chip)

  • Freq: Ka-Band
  • Phase Control: 6 Bits
  • Amplitude Control: 5 Bits
  • Gain: 15dB

Phase Shifter

  • Freq: 5-15GHz
  • Phase Control: 6 Bits

GaAs (pHEMT)

MPT’s team has extensive experience in the development of MMICs. Though our experience covers a broad range including point to point systems, wireless networks and communication systems, the majority of our integrated circuit experience is in phased arrays.

Our modules customers who need custom MMIC functions benefit from a one stop solution. Our customers save time and the expense often involved in supporting multiple suppliers. This also reduces the risk of errors. Our customers who just need custom MMIC development benefit from our experience and existing IP to deliver solutions.

Our team has developed face up MMICs and Flip chip MMICs. The flip chip solutions are particularly useful for millimeter-wave applications where interconnection inductance from wire bonds can become too large. Flip chips can provide low inductance interconnect to 80GHz. Listed below are just a few examples of MMIC chips developed by the MPT Team:

Common Leg (CLC MMIC)

  • Freq: 7-11 GHz
  • Phase Control: 6 Bits
  • Amplitude Control: 5 Bits
  • Gain: 12dB
  • Conventional Face Up


  • Freq: 8-11 GHz
  • Output Power: 8W
  • Gain: 22dB
  • Conventional Face Up

Low Noise Amplifier

  • Freq: 7-14GHz
  • Gain: 22dB
  • Noise Figure: 1.6dB

Highly Integrated Differential Amp + Distributed Amplifier

  • Freq: 30KHz-22 GHz
  • Output Power: 0.5W
  • Gain: 28dB

Distributed Amplifier

  • Freq: 30KHz-15 GHz
  • Output Power: 0.W
  • Gain: 11dB

GaN for High Power

GaN provides significant advantages for high power amplifiers because of the larger breakdown voltage and higher power density. Since GaN is a wide band gap material, it can achieve reliable output power increases of five times higher than GaAs can achieve.

Our customers benefit from our ability to develop custom GaN integrated circuit solutions from L-Band to Ka-Band. We have developed high power amplifiers, low noise amplifiers, and limiters in GaN. One benefit of GaN for low noise amplifiers is that they can achieve higher power handling.